VISHAY · FETs & Power MOSFETs · MPN SQM50N04-4M1_GE3
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| Drain to Source Voltage | 40V |
|---|---|
| Gate Charge(Qg) | 105nC@10V |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 150W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 4.1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
40V 50A 3.5V 150W 4.1mΩ@10V 1 N-channel TO-263(D2PAk) Single FETs, MOSFETs RoHS