VISHAY SQM50020EL_GE3

VISHAY · FETs & Power MOSFETs · MPN SQM50020EL_GE3

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Specifications

Gate Charge(Qg)200nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)1.1nF
RDS(on)2.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)15.1nF
TypeN-Channel

Technical details

N-Channel 60V 120A 125W Surface Mount TO-263(D2PAK)

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