VISHAY SQM40061EL_GE3

VISHAY · FETs & Power MOSFETs · MPN SQM40061EL_GE3

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Specifications

Gate Charge(Qg)280nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)1nF
RDS(on)5.1mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)14.5nF

Technical details

P-Channel 40V 100A Surface Mount TO-263(D2Pak)

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