VISHAY SQM40016EM_GE3

VISHAY · FETs & Power MOSFETs · MPN SQM40016EM_GE3

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Specifications

Gate Charge(Qg)245nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)250A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)270pF
RDS(on)1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)15nF

Technical details

40V 250A 3.5V 300W 1mΩ@10V 1 N-channel TO-263-7 Single FETs, MOSFETs RoHS

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