VISHAY · FETs & Power MOSFETs · MPN SQM40010EL_GE3
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| Gate Charge(Qg) | 230nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 10.9nF |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 375W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.9nF |
| RDS(on) | 1.9mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 17.1nF |
| Type | N-Channel |
40V 120A 2.5V 375W 1.9mΩ@4.5V 1 N-channel N-Channel TO-263(D2PAK) Single FETs, MOSFETs RoHS