VISHAY · FETs & Power MOSFETs · MPN SQM35N30-97_GE3
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| Gate Charge(Qg) | 130nC@10V |
|---|---|
| Drain to Source Voltage | 300V |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 375W |
| Reverse Transfer Capacitance (Crss@Vds) | 185pF |
| RDS(on) | 97mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.65nF |
300V 35A 3.5V 375W 97mΩ@10V 1 N-channel TO-263(D2PAk) Single FETs, MOSFETs RoHS