VISHAY · FETs & Power MOSFETs · MPN SQM200N04-1M8_GE3
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| Drain to Source Voltage | 40V |
|---|---|
| Gate Charge(Qg) | 310nC@10V |
| Current - Continuous Drain(Id) | 200A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 375W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.05nF |
| RDS(on) | 1.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 17.35nF |
40V 200A 3.5V 375W 1.8mΩ@10V 1 N-channel TO-263-7 Single FETs, MOSFETs RoHS