VISHAY SQM120P04-04L_GE3

VISHAY · FETs & Power MOSFETs · MPN SQM120P04-04L_GE3

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Specifications

Gate Charge(Qg)330nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)1.614nF
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation375W
Reverse Transfer Capacitance (Crss@Vds)2.02nF
RDS(on)4mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)13.98nF
TypeP-Channel

Technical details

P-Channel 40V 120A 375W Surface Mount TO-263(D2Pak)

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