VISHAY · FETs & Power MOSFETs · MPN SQM120N04-1M9_GE3
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| Gate Charge(Qg) | 270nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 300W |
| Reverse Transfer Capacitance (Crss@Vds) | 555pF |
| RDS(on) | 1.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.79nF |
40V 120A 3.5V 300W 1.9mΩ@10V 1 N-channel TO-263(D2PAk) Single FETs, MOSFETs RoHS