VISHAY · FETs & Power MOSFETs · MPN SQM110P06-8M9L_GE3
No reviews yet — be the first to review VISHAY SQM110P06-8M9L_GE3.
| Gate Charge(Qg) | 200nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 940pF |
| Current - Continuous Drain(Id) | 110A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 230W |
| Reverse Transfer Capacitance (Crss@Vds) | 730pF |
| RDS(on) | 13.2mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 7.45nF |
| Type | P-Channel |
P-Channel 60V 110A 230W Surface Mount TO-263(D2PAK)