VISHAY · FETs & Power MOSFETs · MPN SQM110N05-06L_GE3
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| Drain to Source Voltage | 55V |
|---|---|
| Gate Charge(Qg) | 110nC@10V |
| Current - Continuous Drain(Id) | 110A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 157W |
| RDS(on) | 6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.44nF |
55V 110A 2.5V 157W 6mΩ@10V 1 N-channel TO-263(D2PAk) Single FETs, MOSFETs RoHS