VISHAY SQM10250E_GE3

VISHAY · FETs & Power MOSFETs · MPN SQM10250E_GE3

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Specifications

Gate Charge(Qg)75nC@10V
Drain to Source Voltage250V
Current - Continuous Drain(Id)65A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation375W
Reverse Transfer Capacitance (Crss@Vds)85pF
RDS(on)30mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.05nF

Technical details

N-Channel 250V 65A 375W Surface Mount TO-263(D2PAK)

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