VISHAY SQM100P10-19L_GE3

VISHAY · FETs & Power MOSFETs · MPN SQM100P10-19L_GE3

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Specifications

Gate Charge(Qg)350nC
Drain to Source Voltage100V
Output Capacitance(Coss)1.1nF
Current - Continuous Drain(Id)93A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation375W
Reverse Transfer Capacitance (Crss@Vds)850pF
RDS(on)22.2mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)14.1nF
TypeP-Channel

Technical details

P-Channel 100V 93A 375W Surface Mount TO-263(D2PAK)

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