VISHAY SQJQ960EL-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJQ960EL-T1_GE3

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Specifications

Current - Continuous Drain(Id)63A
RDS(on)18mΩ@10V
Pd - Power Dissipation71W
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage60V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)108pF
Number2 N-Channel
Input Capacitance(Ciss)1.95nF
Gate Charge(Qg)24nC@10V
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)964pF

Technical details

N-Channel Array 60V 63A 71W PowerPAK8x8L

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