VISHAY SQJQ936EL-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJQ936EL-T1_GE3

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Specifications

Current - Continuous Drain(Id)100A
RDS(on)2.7mΩ@4.5V
Pd - Power Dissipation75W
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage40V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)200pF
Input Capacitance(Ciss)7.3nF
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)2.145nF

Technical details

100A 2.7mΩ@4.5V 75W 2.5V PowerPAK8X8DUAL FET, MOSFET Arrays RoHS

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