VISHAY SQJQ906EL-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJQ906EL-T1_GE3

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Specifications

Current - Continuous Drain(Id)160A
RDS(on)-
Pd - Power Dissipation187W
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage40V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)-
Number2 N-Channel
Input Capacitance(Ciss)3.238nF
Gate Charge(Qg)-
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)-

Technical details

160A 187W 2.5V 2 N-Channel FET, MOSFET Arrays RoHS

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