VISHAY · FETs & Power MOSFETs · MPN SQJQ906E-T1_GE3
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| Current - Continuous Drain(Id) | 95A |
|---|---|
| Pd - Power Dissipation | 50W |
| RDS(on) | 3.3mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Drain to Source Voltage | 40V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 105pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 3.6nF |
| Gate Charge(Qg) | 42nC@10V |
| Operating Temperature | -55℃~+175℃ |
| Output Capacitance(Coss) | 2.045nF |
95A 50W 3.3mΩ@10V 3.5V 2 N-Channel FET, MOSFET Arrays RoHS