VISHAY · FETs & Power MOSFETs · MPN SQJQ904E-T1_GE3
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| Current - Continuous Drain(Id) | 100A |
|---|---|
| Pd - Power Dissipation | 25W |
| RDS(on) | 3.4mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Drain to Source Voltage | 40V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 220pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 5.9nF |
| Gate Charge(Qg) | 75nC@10V |
| Operating Temperature | -55℃~+175℃ |
| Output Capacitance(Coss) | 3.3nF |
100A 25W 3.4mΩ@10V 3.5V 2 N-Channel PowerPAK8x8L FET, MOSFET Arrays RoHS