VISHAY · FETs & Power MOSFETs · MPN SQJQ510ER-T1_GE3
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| Output Capacitance(Coss) | 3.655nF |
|---|---|
| Pd - Power Dissipation | 214W |
| Configuration | - |
| Drain to Source Voltage | 100V |
| Gate Charge(Qg) | 88nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| RDS(on) | 1.5mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.776nF |
214W 100V 2.8V 1.5mΩ@10V 1 N-channel N-Channel Single FETs, MOSFETs RoHS