VISHAY · FETs & Power MOSFETs · MPN SQJQ410EL-T1_GE3
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| Gate Charge(Qg) | 150nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 2.85nF |
| Current - Continuous Drain(Id) | 135A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 136W |
| Reverse Transfer Capacitance (Crss@Vds) | 290pF |
| RDS(on) | 3.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.35nF |
| Type | N-Channel |
N-Channel 100V 135A 136W PowerPAK8x8L