VISHAY · FETs & Power MOSFETs · MPN SQJQ186E-T1_GE3
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| Gate Charge(Qg) | 185nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 245A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 357W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 2.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
80V 245A 3.5V 357W 2.3mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS