VISHAY SQJQ184ER-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJQ184ER-T1_GE3

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Specifications

Drain to Source Voltage80V
Gate Charge(Qg)240nC@10V
Current - Continuous Drain(Id)430A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation600W
Reverse Transfer Capacitance (Crss@Vds)129pF
RDS(on)1.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)16.009nF
TypeN-Channel

Technical details

N-Channel 80V 430A 600W Surface Mount SMD-8P

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