VISHAY · FETs & Power MOSFETs · MPN SQJQ160E-T1_GE3
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| Configuration | - |
|---|---|
| Drain to Source Voltage | 60V |
| Gate Charge(Qg) | 275nC@10V |
| Output Capacitance(Coss) | 6.681nF |
| Current - Continuous Drain(Id) | 602A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 200W |
| Reverse Transfer Capacitance (Crss@Vds) | 458pF |
| RDS(on) | 0.85mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 16.07nF |
N-Channel 60V 602A 200W PowerPAK-5(8x8)