VISHAY · FETs & Power MOSFETs · MPN SQJQ148E-T1_GE3
No reviews yet — be the first to review VISHAY SQJQ148E-T1_GE3.
| Gate Charge(Qg) | 86nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 1.81nF |
| Current - Continuous Drain(Id) | 375A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 325W |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF |
| RDS(on) | 1.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.93nF |
| Type | N-Channel |
40V 375A 3.5V 325W 1.6mΩ@10V 1 N-channel N-Channel PowerPAK(8x8) Single FETs, MOSFETs RoHS