VISHAY · FETs & Power MOSFETs · MPN SQJQ140ER-T1_GE3
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| Gate Charge(Qg) | 192nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 413A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Pd - Power Dissipation | 214W |
| RDS(on) | 0.57mΩ@10V |
| Number | 1 N-channel |
| Type | N-Channel |
40V 413A 2.7V 214W 0.57mΩ@10V 1 N-channel N-Channel PowerPAK-8 Single FETs, MOSFETs RoHS