VISHAY SQJQ131EL-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJQ131EL-T1_GE3

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)731nC@10V
Output Capacitance(Coss)3.42nF
Current - Continuous Drain(Id)280A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation600W
Reverse Transfer Capacitance (Crss@Vds)3.174nF
RDS(on)1.4mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)33.05nF
TypeP-Channel

Technical details

P-Channel 30V 280A 600W PowerPAK-5(8x8)

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