VISHAY · FETs & Power MOSFETs · MPN SQJQ112ER-T1_GE3
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 272nC@10V |
| Output Capacitance(Coss) | 1.857nF |
| Current - Continuous Drain(Id) | 296A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 600W |
| Reverse Transfer Capacitance (Crss@Vds) | 112pF |
| RDS(on) | 2.53mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 15.945nF |
| Type | N-Channel |
100V 296A 3.5V 600W 2.53mΩ@10V 1 N-channel N-Channel PowerPAK(8x8) Single FETs, MOSFETs RoHS