VISHAY · FETs & Power MOSFETs · MPN SQJQ100EL-T1_GE3
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| Gate Charge(Qg) | 220nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 200A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 50W |
| Reverse Transfer Capacitance (Crss@Vds) | 950pF |
| RDS(on) | 1.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 14.5nF |
40V 200A 1.5V 50W 1.2mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS