VISHAY · FETs & Power MOSFETs · MPN SQJQ100E-T1_GE3
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| Drain to Source Voltage | 40V |
|---|---|
| Gate Charge(Qg) | 165nC@10V |
| Output Capacitance(Coss) | 7.8nF |
| Current - Continuous Drain(Id) | 200A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 150W |
| Reverse Transfer Capacitance (Crss@Vds) | 800pF |
| RDS(on) | 1.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 14.78nF |
| Type | N-Channel |
40V 200A 3.5V 150W 1.5mΩ@10V 1 N-channel N-Channel PowerPAK(8x8) Single FETs, MOSFETs RoHS