VISHAY · FETs & Power MOSFETs · MPN SQJB90EP-T1_GE3
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| Current - Continuous Drain(Id) | 30A |
|---|---|
| RDS(on) | 21.5mΩ@10V |
| Pd - Power Dissipation | 48W |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Drain to Source Voltage | 80V |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.2nF |
| Gate Charge(Qg) | 25nC@10V |
| Operating Temperature | -55℃~+175℃ |
30A 21.5mΩ@10V 48W 3.5V 2 N-Channel PowerPAK-SO-8L FET, MOSFET Arrays RoHS