VISHAY SQJB80EP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJB80EP-T1_GE3

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Specifications

Current - Continuous Drain(Id)30A
RDS(on)19mΩ@10V
Pd - Power Dissipation16W
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage80V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)35pF
Number2 N-Channel
Input Capacitance(Ciss)1.4nF
Gate Charge(Qg)32nC@10V
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)445pF

Technical details

N-Channel Array 80V 30A 16W Surface Mount PowerPAK-SO-8L

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