VISHAY SQJB70EP-T1_BE3

VISHAY · FETs & Power MOSFETs · MPN SQJB70EP-T1_BE3

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Specifications

Current - Continuous Drain(Id)11.3A
RDS(on)95mΩ@10V
Pd - Power Dissipation27W
Gate Threshold Voltage (Vgs(th))3.5V
Drain to Source Voltage100V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)16pF
Number2 N-Channel
Input Capacitance(Ciss)220pF
Gate Charge(Qg)4nC@10V
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)160pF

Technical details

11.3A 95mΩ@10V 27W 3.5V 2 N-Channel FET, MOSFET Arrays RoHS

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