VISHAY · FETs & Power MOSFETs · MPN SQJB68EP-T1_GE3
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| Current - Continuous Drain(Id) | 11A |
|---|---|
| RDS(on) | - |
| Pd - Power Dissipation | 27W |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Drain to Source Voltage | 100V |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 280pF |
| Gate Charge(Qg) | 8nC@10V |
| Operating Temperature | -55℃~+175℃ |
11A 27W 2.5V 2 N-Channel PowerPAK-SO-8L FET, MOSFET Arrays RoHS