VISHAY SQJB68EP-T1_BE3

VISHAY · FETs & Power MOSFETs · MPN SQJB68EP-T1_BE3

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Specifications

Current - Continuous Drain(Id)11A
Pd - Power Dissipation9W
RDS(on)117mΩ@4.5V
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage100V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)20pF
Number2 N-Channel
Input Capacitance(Ciss)280pF
Gate Charge(Qg)8nC@10V
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)118pF

Technical details

N-Channel Array 100V 11A 9W PowerPAKSO-8L

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