VISHAY SQJB60EP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJB60EP-T1_GE3

No reviews yet — be the first to review VISHAY SQJB60EP-T1_GE3.

Specifications

Current - Continuous Drain(Id)30A
RDS(on)12mΩ@10V
Pd - Power Dissipation48W
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage60V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)40pF
Number2 N-Channel
Input Capacitance(Ciss)1.6nF
Gate Charge(Qg)30nC@10V
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)506pF

Technical details

N-Channel Array 60V 30A 48W PowerPAKSO-8L

Related FETs & Power MOSFETs