VISHAY · FETs & Power MOSFETs · MPN SQJB46EP-T1_GE3
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| Current - Continuous Drain(Id) | 30A |
|---|---|
| Pd - Power Dissipation | 34W |
| RDS(on) | 8mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 3.3V |
| Drain to Source Voltage | 40V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.8nF |
| Gate Charge(Qg) | 32nC@10V |
| Operating Temperature | -55℃~+175℃ |
| Output Capacitance(Coss) | 600pF |
30A 34W 8mΩ@10V 3.3V 2 N-Channel SO-8L FET, MOSFET Arrays RoHS