VISHAY SQJB46EP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJB46EP-T1_GE3

No reviews yet — be the first to review VISHAY SQJB46EP-T1_GE3.

Specifications

Current - Continuous Drain(Id)30A
Pd - Power Dissipation34W
RDS(on)8mΩ@10V
Gate Threshold Voltage (Vgs(th))3.3V
Drain to Source Voltage40V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)45pF
Number2 N-Channel
Input Capacitance(Ciss)1.8nF
Gate Charge(Qg)32nC@10V
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)600pF

Technical details

30A 34W 8mΩ@10V 3.3V 2 N-Channel SO-8L FET, MOSFET Arrays RoHS

Related FETs & Power MOSFETs