VISHAY SQJB46ELP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJB46ELP-T1_GE3

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Specifications

Current - Continuous Drain(Id)30A
Pd - Power Dissipation34W
RDS(on)10mΩ@4.5V
Gate Threshold Voltage (Vgs(th))2.2V
Drain to Source Voltage40V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)48pF
Number2 N-Channel
Input Capacitance(Ciss)2.1nF
Gate Charge(Qg)40nC@10V
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)600pF

Technical details

30A 34W 10mΩ@4.5V 2.2V 2 N-Channel FET, MOSFET Arrays RoHS

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