VISHAY · FETs & Power MOSFETs · MPN SQJB04ELP-T1_GE3
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| Current - Continuous Drain(Id) | 30A |
|---|---|
| RDS(on) | 14.6mΩ@4.5V |
| Pd - Power Dissipation | 27W |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Drain to Source Voltage | 40V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.055nF |
| Gate Charge(Qg) | - |
| Operating Temperature | -55℃~+175℃ |
| Output Capacitance(Coss) | - |
30A 14.6mΩ@4.5V 27W 2.2V 2 N-Channel FET, MOSFET Arrays RoHS