VISHAY SQJB02ELP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJB02ELP-T1_GE3

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Specifications

Current - Continuous Drain(Id)30A
Pd - Power Dissipation27W
RDS(on)10mΩ@4.5V
Gate Threshold Voltage (Vgs(th))2.2V
Drain to Source Voltage40V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)35pF
Number2 N-Channel
Input Capacitance(Ciss)1.7nF
Gate Charge(Qg)32nC@10V
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)400pF

Technical details

N-Channel Array 40V 30A 27W Surface Mount PowerPAK-SO-8-Dual

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