VISHAY SQJB00EP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJB00EP-T1_GE3

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Specifications

Current - Continuous Drain(Id)30A
RDS(on)13mΩ@10V
Pd - Power Dissipation48W
Gate Threshold Voltage (Vgs(th))3.5V
Drain to Source Voltage60V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)40pF
Number2 N-Channel
Input Capacitance(Ciss)1.7nF
Gate Charge(Qg)35nC@10V
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)750pF

Technical details

N-Channel Array 60V 30A 48W PowerPAKSO-8L

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