VISHAY SQJB00EP-T1_BE3

VISHAY · FETs & Power MOSFETs · MPN SQJB00EP-T1_BE3

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Specifications

Current - Continuous Drain(Id)30A
RDS(on)13mΩ@10V
Pd - Power Dissipation48W
Gate Threshold Voltage (Vgs(th))3.5V
Drain to Source Voltage60V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)-
Number2 N-Channel
Input Capacitance(Ciss)1.7nF
Gate Charge(Qg)35nC@10V
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)550pF

Technical details

30A 13mΩ@10V 48W 3.5V 2 N-Channel PowerPAKSO-8 FET, MOSFET Arrays RoHS

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