VISHAY · FETs & Power MOSFETs · MPN SQJA96EP-T1_GE3
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 25nC@10V |
| Drain to Source Voltage | 80V |
| Output Capacitance(Coss) | 625pF |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 48W |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| RDS(on) | 43.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.2nF |
80V 30A 3.5V 48W 43.9mΩ@10V 1 N-channel N-Channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS