VISHAY · FETs & Power MOSFETs · MPN SQJA82EP-T1_GE3
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| Gate Charge(Qg) | 60nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 22W |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF |
| RDS(on) | 8.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3nF |
80V 60A 2.5V 22W 8.2mΩ@10V 1 N-channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS