VISHAY · FETs & Power MOSFETs · MPN SQJA72EP-T1_GE3
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| Gate Charge(Qg) | 30nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 37A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 55W |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| RDS(on) | 19mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.39nF |
100V 37A 2.5V 55W 19mΩ@10V 1 N-channel SO-8-4 Single FETs, MOSFETs RoHS