VISHAY SQJA66EP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJA66EP-T1_GE3

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Specifications

Gate Charge(Qg)98nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)2.25nF
Current - Continuous Drain(Id)75A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.3V
Pd - Power Dissipation68W
Reverse Transfer Capacitance (Crss@Vds)150pF
RDS(on)3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.4nF
TypeN-Channel

Technical details

N-Channel 60V 75A 68W Surface Mount PowerPAK-SO-8

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