VISHAY · FETs & Power MOSFETs · MPN SQJA36EP-T1_GE3
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| Drain to Source Voltage | 40V |
|---|---|
| Gate Charge(Qg) | 107nC@10V |
| Output Capacitance(Coss) | 1.902nF |
| Current - Continuous Drain(Id) | 350A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 500W |
| Reverse Transfer Capacitance (Crss@Vds) | 175pF |
| RDS(on) | 1.24mΩ@10V |
| Input Capacitance(Ciss) | 6.636nF |
| Type | N-Channel |
40V 350A 3.5V 500W 1.24mΩ@10V N-Channel PowerPAK-SO-8L Single FETs, MOSFETs RoHS