VISHAY SQJA26EP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJA26EP-T1_GE3

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)261nC@10V
Output Capacitance(Coss)1.774nF
Current - Continuous Drain(Id)410A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation500W
Reverse Transfer Capacitance (Crss@Vds)186pF
RDS(on)0.77mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)9.778nF
TypeN-Channel

Technical details

N-Channel 30V 410A 500W PowerPAKSO-8L

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