VISHAY SQJA20EP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJA20EP-T1_GE3

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Specifications

Gate Charge(Qg)17.6nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)456pF
Current - Continuous Drain(Id)22.5A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation68W
Reverse Transfer Capacitance (Crss@Vds)38pF
RDS(on)41mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)955pF
TypeN-Channel

Technical details

N-Channel 200V 22.5A 68W PowerPAKSO-8L

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