VISHAY SQJA02EP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJA02EP-T1_GE3

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Specifications

Gate Charge(Qg)80nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)75A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation68W
Reverse Transfer Capacitance (Crss@Vds)75pF
RDS(on)4.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.7nF

Technical details

60V 75A 3.5V 68W 4.8mΩ@10V 1 N-channel PowerPAK-SO-8L Single FETs, MOSFETs RoHS

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