VISHAY SQJA00EP-T1_GE3

VISHAY · FETs & Power MOSFETs · MPN SQJA00EP-T1_GE3

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Specifications

Gate Charge(Qg)35nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation16W
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)13mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.7nF

Technical details

60V 30A 3.5V 16W 13mΩ@10V 1 N-channel PowerPAK-SO-8L Single FETs, MOSFETs RoHS

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